Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport
Publication Date
June 29, 2016
Description
We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 – 100 nm can be grown on SiO2/Si, mica and graphite using a physical vapour transport method. The β-In2Se3 layers are chemically stable at room temperature and exhibit a blue-shift of the photoluminescence emission when the layer thickness is reduced, due to strong quantum confinement of carriers by the physical boundaries of the material. The layers are characterized using Raman spectroscopy and X-ray diffraction from which we confirm lattice constants c = 28.310.05 Å and a = 3.990.02 Å. In addition, these layers show high photoresponsivity of up to ~ 2×103 A/W at a wavelength of 633 nm, with rise and decay times of 0.6 ms and 2.5 ms, respectively, confirming the potential of the as-grown layers for high sensitivity, fast photodetectors.
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Associate publ. DOI
Subjects (LCSH)
Subjects (JACS)
Subjects (LC)
Divisions
University of Nottingham, UK Campus::Faculty of Science::School of Physics and Astronomy
Data type
Images acquired using scanning probe microscopy, datasets of spectroscopic measurements
Grant Number
EP/M012700/1
EP/K005138/1
Data collection method
Asylum MFP3D Atomic Force Microscope, Horiba LABRAM sptromicroscope
Resource languages
English
Publisher
University of Nottingham
Date Issued
June 1, 2016
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