Defect-Induced Doping and Chemisorption of O2 in Se Deficient GaSe Monolayers
Publication Date
November 22, 2024
Creators
Description
Original data for the Owing to their atomically thin nature, structural defects in two dimensional materials often play a dominating role in their electronic and optical properties. Here, we grow epitaxial GaSe monolayers on graphene/SiC by molecular beam epitaxy and characterise the layers by in situ scanning tunnelling microscopy and angle-resolved photoemission spectroscopy extracted from k-resolved photoemission electron microscopy mapping. We identify an electric dipole at the GaSe/graphene interface, with electrons accumulating on the GaSe, that cannot be compensated by p-type doping through the creation of defects formed by annealing in ultrahigh vacuum. Additionally, we demonstrate that both as-grown and defective GaSe layers are remarkably resilient to oxidation in a pure O2 environment, and chemisorption of O2 molecules on the surface can effectively electronically neutralise the doping in the layer. This work demonstrates the robust interlayer interaction in the GaSe/graphene van der Waals heterostructure and the role of defects on the doping for nanoelectronics.
Collection dates:
2023
Subjects
Subjects (JACS)
Subjects (LC)
Divisions
University of Nottingham, UK Campus::Faculty of Science::School of Physics and Astronomy
Data type
Scanning tunnelling microscopy images and photoemission spectra
Funders
Royal Society
Grant Number
EP/T019018/1
EP/V05323X/1
EP/V008110/1
EP/W035510/1
Data collection method
Scanning tunnelling microscopy, photoemission spectroscopy
Resource languages
English
Publisher
The University of Nottingham
Date Issued
November 22, 2024
Except where otherwise noted, this item's license is described as
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Name
Bradford_et_al_GaSe_defects.zip
Description
Experimental Data Files
Size
438.35 MB
Format
Unknown
Checksum (MD5)
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