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Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe

Publication Date
May 21, 2018
Creators
Description
We demonstrate that γ-InSe and the α, β and γ phases of In2Se3 can be grown epitaxially on ε-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can grow selectively different phases of InxSey depending on the position of the substrate within the furnace. The uniform cleaved surface of ε-GaSe enables the epitaxial growth of the InxSey layers, which are aligned over large areas. The InxSey epilayers are characterised using Raman, photoluminescence, X-ray photoelectron and electron dispersive X-ray spectroscopies. Each InxSey phase and stoichiometry exhibits distinct optical and vibrational properties, providing a tuneable photoluminescence emission range from 1.3 eV to ~ 2 eV suitable for exploitation in electronics and optoelectronics. Coverage (Spatial): Nottingham, UK Collection dates: August 2016 - February 2018
External URI
DOI
Associate publ. DOI
Subjects (LCSH)

Indium compounds

Semiconductors -- Opt...

Photoluminescence

Stoichiometry

Subjects

Indium Selenide, III-...

Subjects (JACS)

Physical sciences::Ph...

Physical sciences::Ph...

Subjects (LC)

Q Science::QC Physics...

Q Science::QC Physics...

Divisions
University of Nottingham, UK Campus::Faculty of Science::School of Physics and Astronomy
Data type
Journal Article
Funders
Funders
Horizon 2020 Graphene Flagship
Grant Number
EP/M012700/1
EP/K005138/1
604391
Data collection method
Experiment
Resource languages
English
Publisher
The University of Nottingham
Date Issued
May 2018
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Name

Temperature dependent PL of gamma-In2Se3.opj

Description
Temperature dependent PL emission of gamma-In2Se3 grown on exfoliated GaSe
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6.33 MB

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Unknown

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78569662ca07a643081c8464e226d3cf

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Power dependent PL of gamma-In2Se3.opj

Description
Power dependent PL emission of gamma-In2Se3 grown on exfoliated GaSe
Size

2.4 MB

Format

Unknown

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4314afa64dc8330f3663a14edb07ed52