Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation

Patane, Amalia; Balakrishnan, Nilanthy

doi:http://doi.org/10.17639/nott.73

Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation

Publication Date

March 20, 2017

Creators

Patane, Amalia

Balakrishnan, Nilanthy

Description

Data collection on the effects of thermal and laser annealing on the electronic properties of InSe Collection dates: 2015-2016

External URI

https://rdmc.nottingham.ac.uk/handle/internal/76

DOI

http://doi.org/10.17639/nott.73

Associate publ. DOI

10.1088/2053-1583/aa61e0

Related resources

https://doi.org/10.1088/2053-1583/aa61e0

Subjects (LCSH)

Indium compounds

Diodes, Semiconductor...

Nanostructured materi...

Indium compounds -- O...

Annealing of metals

Subjects

InSe, annealing, oxid...

Subjects (JACS)

Physical sciences::Ph...

Subjects (LC)

Q Science::QC Physics...

Divisions

University of Nottingham, UK Campus::Faculty of Science::School of Physics and Astronomy

Data type

Images (jpg), power point and origin files.

Funders

Other

Engineering & Physical Sciences Research Council

Funders

European Graphene Flagship

The National Academy of Sciences of Ukraine

Grant Number

EP/M012700/1

EP/K005138/1

604391

Resource languages

English

Publisher

University of Nottingham

Date Issued

March 20, 2017

File(s)

Name

HRTEM of InSe layer.jpg

Size

644.64 KB

Format

JPEG

Checksum (MD5)

359cfa509e4859281fcccc392d8d26f8

Name

CBED of Oxide layer.jpg

Size

249.97 KB

Format

JPEG

Checksum (MD5)

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