Giant moiré patterns and lattice-matched epitaxial graphene grown
Publication Date
December 19, 2017
Description
Lattice-matched graphene on hexagonal boron nitride is expected to lead to the formation
of a band-gap but requires the formation of highly strained material and has not hitherto
been realised. We demonstrate that aligned, lattice-matched graphene can be grown by
molecular beam epitaxy using substrate temperatures in the range 1600-1710 °C and coexists
with a topologically-modified moiré pattern, and with regions of strained graphene
which have giant moiré periods up to ~80 nm. Raman spectra reveal narrow red-shifted
peaks due to uniform isotropic strain, while the giant moiré patterns result in complex
splitting of Raman peaks due to strain variations across the moiré unit cell. The latticematched
graphene has a lower conductance than both the Frenkel-Kontorova-type
dislocation lines, and also the topological defects where they terminate. We relate these
results to theoretical models of band-gap formation in graphene/boron nitride
heterostructures.
Associate publ. DOI
Subjects
Subjects (LC)
Divisions
University of Nottingham, UK Campus::Faculty of Science::School of Chemistry
University of Nottingham, UK Campus::Faculty of Science::School of Physics and Astronomy
Data type
Scanning Probe Microscopy Images, Raman spectra
Funders
Leverhulme Trust
Data collection method
Asylum Cypher Atomic Force Microscope, Horiba LABRAM Raman microscope
Resource languages
English
Publisher
The University of Nottingham
Date Issued
January 1, 2018
File(s)![Thumbnail Image]()
![Thumbnail Image]()
Name
Raw Data files.zip
Size
159.34 MB
Format
Unknown
Checksum (MD5)
d68e901e6ea6dbff824eec44f3a5d746
Name
Readme.txt
Description
Readme
Size
506 B
Format
Text
Checksum (MD5)
5de1b12339b447f1a5f6810ff15618fc