Resonant tunnelling into the two-dimensional subbands of InSe layers
Publication Date
December 20, 2019
Creators
Description
Two-dimensional (2D) van der Waals (vdW) crystals have attracted considerable interest for digital electronics beyond Si-based complementary metal oxide semiconductor technologies. Despite the transformative success of Si-based devices, there are limits to their miniaturization and functionalities. Here we realize resonant tunnelling transistors (RTTs) based on a 2D InSe layer sandwiched between two multi-layered graphene (MLG) electrodes. In these RTTs the energy of the quantum-confined 2D subbands of InSe can be tuned by the thickness of the InSe layer. By applying a voltage across the two MLG electrodes, which serves as the source and drain electrodes to the InSe layer, the chemical potential in the source can be tuned in and out of resonance with a given 2D subband, leading to multiple regions of negative differential conductance (NDC) that can be tuned by electrostatic gating. This work demonstrates the potential of 2D InSe and InSe-based RTTs for applications in quantum electronics.
Collection dates:
December 2018 - July 2019
Associate publ. DOI
Subjects (LCSH)
Subjects
Subjects (JACS)
Subjects (LC)
Divisions
University of Nottingham, UK Campus::Faculty of Science::School of Physics and Astronomy
Data type
Raw data files
Funders
the European Union’s Horizon 2020 research and innovation programme Graphene Flagship Core 2 under grant agreement number 785219
the Defence Science and Technology Laboratory (Dstl)
The Leverhulme Trust [RF-2017-224]
The Royal Society [IE160395]
Grant Number
EP/M012700/1 and EP/N033906/1
Data collection method
Electrical, optical and atomic force microscopy measurements
Resource languages
English
Publisher
The University of Nottingham
Date Issued
January 20, 2020
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Name
InSe subbands.zip
Size
41.55 MB
Format
Unknown
Checksum (MD5)
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