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Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode

Publication Date
August 5, 2016
Creators
Description
The data contains measured current-voltage characteristics and simulated energy band profiles describing Zener tunnelling via zero-dimensional states in a narrow gap diode. In our devices, a narrow quantum well of the mid-infrared (MIR) alloy In(AsN) is placed in the intrinsic (i) layer of a p-i-n diode. The incorporation of nitrogen in the quantum well creates states that are localized on nanometer lengthscales. These levels provide intermediate states that act as “stepping stones” for electrons tunnelling across the diode and give rise to a negative differential resistance (NDR) that is weakly dependent on temperature. Collection dates: Data and simulations collected in 2015 and 2016.
External URI
DOI
Subjects (LCSH)

Tunneling (Physics)

Zener diodes

Subjects

Zener tunnelling; mid...

Subjects (JACS)

Physical sciences::Ph...

Subjects (LC)

Q Science::QC Physics...

Divisions
University of Nottingham, UK Campus::Faculty of Science::School of Physics and Astronomy
Data type
Experimental current-voltage characteristics as ASCII data. Simulated energy band profiles as ASCII data.
Funders
Funders
EU
Grant Number
EPSRC EP/J015296/1
641899
Data collection method
These are described in the text of the article.
Resource languages
English
Publisher
University of Nottingham
Date Issued
November 1, 2016
File(s)
Thumbnail Image
Name

Energy_band_profiles_InAsN_fig5.txt

Description
band diagram
Size

415.36 KB

Format

Text

Checksum (MD5)

15a97bb01b9dbe105ec4a0bbed418e9d

Thumbnail Image
Name

T dependence_IV_InAs_fig2a.txt

Description
Transport T-dependence control sample
Size

97.87 KB

Format

Text

Checksum (MD5)

dbe7db9d1249213028e508cf8e683bc3